PMGD290XN,115 Pricing (USD) [858781PC Stock]
- 1 pcs$0.05194
- 3,000 pcs$0.05168
- Nimewo Pati:
- PMGD290XN,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 0.86A 6TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Rèkteur - Single, Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMGD290XN,115 electronic components. PMGD290XN,115 can be shipped within 24 hours after order. If you have any demands for PMGD290XN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMGD290XN,115 Atribi pwodwi yo
Nimewo Pati :
PMGD290XN,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 20V 0.86A 6TSSOP
Seri :
TrenchMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
860mA
RD sou (Max) @ Id, Vgs :
350 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.72nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
34pF @ 20V
Pouvwa - Max :
410mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
6-TSSOP
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