IXFA26N30X3 Pricing (USD) [27833PC Stock]
- 1 pcs$1.48075
- Nimewo Pati:
- IXFA26N30X3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 300V/26A ULTRA JUNCTION X3-CLASS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - JFETs, Diodes - RF, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in IXYS IXFA26N30X3 electronic components. IXFA26N30X3 can be shipped within 24 hours after order. If you have any demands for IXFA26N30X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFA26N30X3 Atribi pwodwi yo
Nimewo Pati :
IXFA26N30X3
Manifakti :
IXYS
Deskripsyon :
300V/26A ULTRA JUNCTION X3-CLASS
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
26A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
66 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1.465nF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
170W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263AA
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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