[3841PC Stock]
- Nimewo Pati:
- SI5517DU-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N/P-CH 20V 6A CHIPFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5517DU-T1-E3 electronic components. SI5517DU-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5517DU-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5517DU-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SI5517DU-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N/P-CH 20V 6A CHIPFET
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A
RD sou (Max) @ Id, Vgs :
39 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
16nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
520pF @ 10V
Pouvwa - Max :
8.3W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® ChipFET™ Dual
Pake Aparèy Founisè :
PowerPAK® ChipFet Dual
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