Nexperia USA Inc. - PSMN016-100PS,127

KEY Part #: K6402720

PSMN016-100PS,127 Pricing (USD) [70849PC Stock]

  • 1 pcs$0.51426
  • 10 pcs$0.45615
  • 100 pcs$0.34108
  • 500 pcs$0.26451
  • 1,000 pcs$0.20882

Nimewo Pati:
PSMN016-100PS,127
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 100V TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN016-100PS,127 Atribi pwodwi yo

Nimewo Pati : PSMN016-100PS,127
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 100V TO220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 57A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 16 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 49nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2404pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 148W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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