IXTX120P20T Pricing (USD) [5303PC Stock]
- 1 pcs$9.02924
- 30 pcs$8.98431
- Nimewo Pati:
- IXTX120P20T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET P-CH 200V 120A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTX120P20T electronic components. IXTX120P20T can be shipped within 24 hours after order. If you have any demands for IXTX120P20T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTX120P20T Atribi pwodwi yo
Nimewo Pati :
IXTX120P20T
Manifakti :
IXYS
Deskripsyon :
MOSFET P-CH 200V 120A PLUS247
Seri :
TrenchP™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
30 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
740nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
73000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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