SIZ980DT-T1-GE3 Pricing (USD) [129208PC Stock]
- 1 pcs$0.28626
- Nimewo Pati:
- SIZ980DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2 N-CH 30V 8-POWERPAIR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZ980DT-T1-GE3 electronic components. SIZ980DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ980DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ980DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZ980DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 30V 8-POWERPAIR
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual), Schottky
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc), 60A (Tc)
RD sou (Max) @ Id, Vgs :
6.7 mOhm @ 15A, 10V, 1.6 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.1nC @ 4.5V, 35nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
930pF @ 15V, 4600pF @ 15V
Pouvwa - Max :
20W, 66W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-PowerPair®
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