Taiwan Semiconductor Corporation - TSM3N80CI C0G

KEY Part #: K6399737

TSM3N80CI C0G Pricing (USD) [61123PC Stock]

  • 1 pcs$0.63969

Nimewo Pati:
TSM3N80CI C0G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
MOSFET N-CHANNEL 800V 3A ITO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Tiristors - SCR and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM3N80CI C0G Atribi pwodwi yo

Nimewo Pati : TSM3N80CI C0G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET N-CHANNEL 800V 3A ITO220
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.2 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 696pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 94W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : ITO-220AB
Pake / Ka : TO-220-3 Full Pack, Isolated Tab

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