SQJ910AEP-T1_GE3 Pricing (USD) [152759PC Stock]
- 1 pcs$0.24213
- Nimewo Pati:
- SQJ910AEP-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2 N-CH 30V POWERPAK SO8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQJ910AEP-T1_GE3 electronic components. SQJ910AEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ910AEP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ910AEP-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQJ910AEP-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 30V POWERPAK SO8
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
RD sou (Max) @ Id, Vgs :
7 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
39nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1869pF @ 15V
Pouvwa - Max :
48W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual
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