HGTG18N120BN Pricing (USD) [15140PC Stock]
- 1 pcs$2.73574
- 450 pcs$2.72212
- Nimewo Pati:
- HGTG18N120BN
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 54A 390W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTG18N120BN electronic components. HGTG18N120BN can be shipped within 24 hours after order. If you have any demands for HGTG18N120BN, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTG18N120BN Atribi pwodwi yo
Nimewo Pati :
HGTG18N120BN
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 54A 390W TO247
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
54A
Kouran - Pèseptè batman (Icm) :
165A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 18A
Pouvwa - Max :
390W
Oblije chanje enèji :
800µJ (on), 1.8mJ (off)
Kalite Antre :
Standard
Gate chaje :
165nC
Td (on / off) @ 25 ° C :
23ns/170ns
Kondisyon egzamen an :
960V, 18A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247
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