SI1028X-T1-GE3 Pricing (USD) [979588PC Stock]
- 1 pcs$0.03776
- 3,000 pcs$0.03594
- Nimewo Pati:
- SI1028X-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 30V SC89-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - JFETs, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI1028X-T1-GE3 electronic components. SI1028X-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1028X-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1028X-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI1028X-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 30V SC89-6
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
650 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
16pF @ 15V
Pouvwa - Max :
220mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
SC-89-6
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