Nimewo Pati :
ALD212900SAL
Manifakti :
Advanced Linear Devices Inc.
Deskripsyon :
MOSFET 2N-CH 10.6V 0.08A 8SOIC
Seri :
EPAD®, Zero Threshold™
FET Kalite :
2 N-Channel (Dual) Matched Pair
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80mA
RD sou (Max) @ Id, Vgs :
14 Ohm
Vgs (th) (Max) @ Id :
20mV @ 20µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
30pF @ 5V
Operating Tanperati :
0°C ~ 70°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SOIC