ZXMN3F31DN8TA Pricing (USD) [193225PC Stock]
- 1 pcs$0.19142
- 500 pcs$0.10528
- Nimewo Pati:
- ZXMN3F31DN8TA
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 5.7A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN3F31DN8TA electronic components. ZXMN3F31DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3F31DN8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3F31DN8TA Atribi pwodwi yo
Nimewo Pati :
ZXMN3F31DN8TA
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 30V 5.7A 8SOIC
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.7A
RD sou (Max) @ Id, Vgs :
24 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
608pF @ 15V
Pouvwa - Max :
1.8W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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