NTMFS4C022NT1G Pricing (USD) [253034PC Stock]
- 1 pcs$0.16724
- 1,500 pcs$0.16641
- Nimewo Pati:
- NTMFS4C022NT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 30V 30A 136A 5DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTMFS4C022NT1G electronic components. NTMFS4C022NT1G can be shipped within 24 hours after order. If you have any demands for NTMFS4C022NT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTMFS4C022NT1G Atribi pwodwi yo
Nimewo Pati :
NTMFS4C022NT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 30V 30A 136A 5DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Ta), 136A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.7 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
45.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3071pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 64W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
5-DFN (5x6) (8-SOFL)
Pake / Ka :
8-PowerTDFN, 5 Leads
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