BSC750N10NDGATMA1 Pricing (USD) [148661PC Stock]
- 1 pcs$0.24881
- Nimewo Pati:
- BSC750N10NDGATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 100V 3.2A 8TDSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSC750N10NDGATMA1 electronic components. BSC750N10NDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC750N10NDGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC750N10NDGATMA1 Atribi pwodwi yo
Nimewo Pati :
BSC750N10NDGATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 100V 3.2A 8TDSON
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A
RD sou (Max) @ Id, Vgs :
75 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 12µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
720pF @ 50V
Pouvwa - Max :
26W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
PG-TDSON-8 Dual
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