Nexperia USA Inc. - PMN55ENEH

KEY Part #: K6416160

PMN55ENEH Pricing (USD) [566109PC Stock]

  • 1 pcs$0.06534

Nimewo Pati:
PMN55ENEH
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
PMN55ENE/SOT457/SC-74.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMN55ENEH electronic components. PMN55ENEH can be shipped within 24 hours after order. If you have any demands for PMN55ENEH, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMN55ENEH Atribi pwodwi yo

Nimewo Pati : PMN55ENEH
Manifakti : Nexperia USA Inc.
Deskripsyon : PMN55ENE/SOT457/SC-74
Seri : TrenchMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id : 2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 646pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 560mW (Ta), 6.25mW (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-TSOP
Pake / Ka : SC-74, SOT-457