Nimewo Pati :
SSM6L11TU(TE85L,F)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N/P-CH 20V 0.5A UF6 S
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
500mA
RD sou (Max) @ Id, Vgs :
145 mOhm @ 250MA, 4V
Vgs (th) (Max) @ Id :
1.1V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
268pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SMD, Flat Leads
Pake Aparèy Founisè :
UF6