APTC90H12T1G Pricing (USD) [4042PC Stock]
- 100 pcs$32.07046
- Nimewo Pati:
- APTC90H12T1G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET 4N-CH 900V 30A SP1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Single, Diodes - Zener - Arrays, Tiristors - TRIACs and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTC90H12T1G electronic components. APTC90H12T1G can be shipped within 24 hours after order. If you have any demands for APTC90H12T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTC90H12T1G Atribi pwodwi yo
Nimewo Pati :
APTC90H12T1G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 900V 30A SP1
Seri :
CoolMOS™
Estati Pati :
Obsolete
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Super Junction
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A
RD sou (Max) @ Id, Vgs :
120 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs :
270nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
6800pF @ 100V
Pouvwa - Max :
250W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
SP1
Pake Aparèy Founisè :
SP1
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