IXYS - IXTQ96N25T

KEY Part #: K6416990

IXTQ96N25T Pricing (USD) [22589PC Stock]

  • 1 pcs$2.10866
  • 30 pcs$2.09817

Nimewo Pati:
IXTQ96N25T
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 250V 96A TO-3P.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXTQ96N25T electronic components. IXTQ96N25T can be shipped within 24 hours after order. If you have any demands for IXTQ96N25T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTQ96N25T Atribi pwodwi yo

Nimewo Pati : IXTQ96N25T
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 250V 96A TO-3P
Seri : TrenchHV™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 96A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 29 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 114nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 6100pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 625W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3P
Pake / Ka : TO-3P-3, SC-65-3

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