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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTP8G202NG

ON Semiconductor - NTP8G202NG

KEY Part #: K6402435

NTP8G202NG Pricing (USD) [2705PC Stock]

  • 1 pcs$11.09140
  • 10 pcs$10.25885
  • 100 pcs$8.76156
Nimewo Pati:
NTP8G202NG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 600V 9A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - RF, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTP8G202NG electronic components. NTP8G202NG can be shipped within 24 hours after order. If you have any demands for NTP8G202NG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTP8G202NG Atribi pwodwi yo

Nimewo Pati : NTP8G202NG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 600V 9A TO220
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 8V
RD sou (Max) @ Id, Vgs : 350 mOhm @ 5.5A, 8V
Vgs (th) (Max) @ Id : 2.6V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 9.3nC @ 4.5V
Vgs (Max) : ±18V
Antre kapasite (Ciss) (Max) @ Vds : 760pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 65W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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