Vishay Siliconix - SIZ918DT-T1-GE3

KEY Part #: K6522043

SIZ918DT-T1-GE3 Pricing (USD) [158402PC Stock]

  • 1 pcs$0.23350
  • 3,000 pcs$0.21927

Nimewo Pati:
SIZ918DT-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 30V 16A POWERPAIR.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIZ918DT-T1-GE3 electronic components. SIZ918DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ918DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ918DT-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIZ918DT-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 30V 16A POWERPAIR
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A, 28A
RD sou (Max) @ Id, Vgs : 12 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 790pF @ 15V
Pouvwa - Max : 29W, 100W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerWDFN
Pake Aparèy Founisè : 8-PowerPair® (6x5)