IPS80R1K4P7AKMA1 Pricing (USD) [199434PC Stock]
- 1 pcs$0.48918
- 10 pcs$0.43399
- 100 pcs$0.32455
- 500 pcs$0.25170
- 1,000 pcs$0.19871
- Nimewo Pati:
- IPS80R1K4P7AKMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 800V 4A IPAK-SL.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPS80R1K4P7AKMA1 electronic components. IPS80R1K4P7AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS80R1K4P7AKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS80R1K4P7AKMA1 Atribi pwodwi yo
Nimewo Pati :
IPS80R1K4P7AKMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 800V 4A IPAK-SL
Seri :
CoolMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
32W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO251-3
Pake / Ka :
TO-251-3 Stub Leads, IPak
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