SIS888DN-T1-GE3 Pricing (USD) [120687PC Stock]
- 1 pcs$0.30647
- 3,000 pcs$0.28779
- Nimewo Pati:
- SIS888DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 150V 20.2A 1212-8S.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIS888DN-T1-GE3 electronic components. SIS888DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS888DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS888DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIS888DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 150V 20.2A 1212-8S
Seri :
ThunderFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7.5V, 10V
RD sou (Max) @ Id, Vgs :
58 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
420pF @ 75V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
52W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8S (3.3x3.3)
Pake / Ka :
PowerPAK® 1212-8S
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