STMicroelectronics - STH110N10F7-6

KEY Part #: K6415381

STH110N10F7-6 Pricing (USD) [12429PC Stock]

  • 1,000 pcs$0.66354

Nimewo Pati:
STH110N10F7-6
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 100V 110A H2PAK-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Diodes - Zener - Single and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STH110N10F7-6 Atribi pwodwi yo

Nimewo Pati : STH110N10F7-6
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 100V 110A H2PAK-6
Seri : DeepGATE™, STripFET™ VII
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 6.5 mOhm @ 55A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5117pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : H2PAK-6
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)