IXFK66N85X Pricing (USD) [4553PC Stock]
- 1 pcs$10.46131
- 10 pcs$9.50970
- 100 pcs$7.68894
- Nimewo Pati:
- IXFK66N85X
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 850V/66A ULTRA JUNCTION X-CLASS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Modil pouvwa chofè, Diodes - Zener - Arrays, Diodes - RF and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFK66N85X electronic components. IXFK66N85X can be shipped within 24 hours after order. If you have any demands for IXFK66N85X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFK66N85X Atribi pwodwi yo
Nimewo Pati :
IXFK66N85X
Manifakti :
IXYS
Deskripsyon :
850V/66A ULTRA JUNCTION X-CLASS
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
850V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
66A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
65 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
230nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
8900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1250W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-264
Pake / Ka :
TO-264-3, TO-264AA
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