Diodes Incorporated - DMN2005DLP4K-7

KEY Part #: K6524997

DMN2005DLP4K-7 Pricing (USD) [580156PC Stock]

  • 1 pcs$0.06375
  • 3,000 pcs$0.05743

Nimewo Pati:
DMN2005DLP4K-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 20V 0.3A 6-DFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Diodes - RF, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2005DLP4K-7 Atribi pwodwi yo

Nimewo Pati : DMN2005DLP4K-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 20V 0.3A 6-DFN
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 300mA
RD sou (Max) @ Id, Vgs : 1.5 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id : 900mV @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 400mW
Operating Tanperati : -65°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-XFDFN Exposed Pad
Pake Aparèy Founisè : X2-DFN1310-6 (Type B)