IXFR18N90P Pricing (USD) [10025PC Stock]
- 1 pcs$4.11070
- 210 pcs$4.08055
- Nimewo Pati:
- IXFR18N90P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 900V ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXFR18N90P electronic components. IXFR18N90P can be shipped within 24 hours after order. If you have any demands for IXFR18N90P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFR18N90P Atribi pwodwi yo
Nimewo Pati :
IXFR18N90P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 900V ISOPLUS247
Seri :
HiPerFET™, PolarP2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
660 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
97nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
5230pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS247™
Pake / Ka :
ISOPLUS247™
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