IXTT2N170D2 Pricing (USD) [4903PC Stock]
- 1 pcs$10.16480
- 10 pcs$9.23867
- 100 pcs$7.46982
- Nimewo Pati:
- IXTT2N170D2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1700V 2A TO-268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXTT2N170D2 electronic components. IXTT2N170D2 can be shipped within 24 hours after order. If you have any demands for IXTT2N170D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTT2N170D2 Atribi pwodwi yo
Nimewo Pati :
IXTT2N170D2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1700V 2A TO-268
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
6.5 Ohm @ 1A, 0V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3650pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
568W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-268
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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