Vishay Siliconix - SI4890BDY-T1-GE3

KEY Part #: K6394339

SI4890BDY-T1-GE3 Pricing (USD) [150065PC Stock]

  • 1 pcs$0.24648
  • 2,500 pcs$0.23145

Nimewo Pati:
SI4890BDY-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 30V 16A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - JFETs and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI4890BDY-T1-GE3 electronic components. SI4890BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4890BDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4890BDY-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI4890BDY-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 16A 8-SOIC
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 1535pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 5.7W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SO
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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