Nimewo Pati :
BSO612CVGHUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 60V 2A 8-SOIC
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A, 2A
RD sou (Max) @ Id, Vgs :
120 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs :
15.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
340pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
PG-DSO-8