Infineon Technologies - BSO612CVGHUMA1

KEY Part #: K6525342

BSO612CVGHUMA1 Pricing (USD) [210131PC Stock]

  • 1 pcs$0.17602
  • 2,500 pcs$0.16896

Nimewo Pati:
BSO612CVGHUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N/P-CH 60V 2A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Modil pouvwa chofè ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSO612CVGHUMA1 Atribi pwodwi yo

Nimewo Pati : BSO612CVGHUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N/P-CH 60V 2A 8-SOIC
Seri : SIPMOS®
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A, 2A
RD sou (Max) @ Id, Vgs : 120 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 4V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : 15.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 340pF @ 25V
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : PG-DSO-8