BSO612CVGHUMA1 Pricing (USD) [210131PC Stock]
- 1 pcs$0.17602
- 2,500 pcs$0.16896
- Nimewo Pati:
- BSO612CVGHUMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N/P-CH 60V 2A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSO612CVGHUMA1 electronic components. BSO612CVGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO612CVGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO612CVGHUMA1 Atribi pwodwi yo
Nimewo Pati :
BSO612CVGHUMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 60V 2A 8-SOIC
Seri :
SIPMOS®
Estati Pati :
Active
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A, 2A
RD sou (Max) @ Id, Vgs :
120 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs :
15.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
340pF @ 25V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
PG-DSO-8
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