Vishay Semiconductor Diodes Division - FA38SA50LC

KEY Part #: K6414639

[8368PC Stock]


    Nimewo Pati:
    FA38SA50LC
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    MOSFET N-CH 500V 38A SOT-227.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division FA38SA50LC electronic components. FA38SA50LC can be shipped within 24 hours after order. If you have any demands for FA38SA50LC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FA38SA50LC Atribi pwodwi yo

    Nimewo Pati : FA38SA50LC
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : MOSFET N-CH 500V 38A SOT-227
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 38A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 130 mOhm @ 23A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 420nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 6900pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 500W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake Aparèy Founisè : SOT-227
    Pake / Ka : SOT-227-4, miniBLOC

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