SI7949DP-T1-E3 Pricing (USD) [111328PC Stock]
- 1 pcs$0.77767
- 10 pcs$0.70283
- 100 pcs$0.56489
- 500 pcs$0.43936
- 1,000 pcs$0.34437
- Nimewo Pati:
- SI7949DP-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2P-CH 60V 3.2A PPAK SO-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - JFETs, Tiristors - SCR and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI7949DP-T1-E3 electronic components. SI7949DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7949DP-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7949DP-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SI7949DP-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2P-CH 60V 3.2A PPAK SO-8
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.2A
RD sou (Max) @ Id, Vgs :
64 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
-
Pouvwa - Max :
1.5W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual
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