FGA25N120ANTDTU Pricing (USD) [22160PC Stock]
- 1 pcs$2.39741
- 10 pcs$2.15326
- 100 pcs$1.76408
- 500 pcs$1.50171
- 1,000 pcs$1.26651
- Nimewo Pati:
- FGA25N120ANTDTU
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 50A 312W TO3P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FGA25N120ANTDTU electronic components. FGA25N120ANTDTU can be shipped within 24 hours after order. If you have any demands for FGA25N120ANTDTU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FGA25N120ANTDTU Atribi pwodwi yo
Nimewo Pati :
FGA25N120ANTDTU
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 50A 312W TO3P
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT and Trench
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
50A
Kouran - Pèseptè batman (Icm) :
90A
Vce (sou) (Max) @ Vge, Ic :
2.65V @ 15V, 50A
Pouvwa - Max :
312W
Oblije chanje enèji :
4.1mJ (on), 960µJ (off)
Kalite Antre :
Standard
Gate chaje :
200nC
Td (on / off) @ 25 ° C :
50ns/190ns
Kondisyon egzamen an :
600V, 25A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
350ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-3P-3, SC-65-3
Pake Aparèy Founisè :
TO-3P
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