ON Semiconductor - FGA25N120ANTDTU

KEY Part #: K6421756

FGA25N120ANTDTU Pricing (USD) [22160PC Stock]

  • 1 pcs$2.39741
  • 10 pcs$2.15326
  • 100 pcs$1.76408
  • 500 pcs$1.50171
  • 1,000 pcs$1.26651

Nimewo Pati:
FGA25N120ANTDTU
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1200V 50A 312W TO3P.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Diodes - Zener - Single and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGA25N120ANTDTU Atribi pwodwi yo

Nimewo Pati : FGA25N120ANTDTU
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1200V 50A 312W TO3P
Seri : -
Estati Pati : Active
Kalite IGBT : NPT and Trench
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 90A
Vce (sou) (Max) @ Vge, Ic : 2.65V @ 15V, 50A
Pouvwa - Max : 312W
Oblije chanje enèji : 4.1mJ (on), 960µJ (off)
Kalite Antre : Standard
Gate chaje : 200nC
Td (on / off) @ 25 ° C : 50ns/190ns
Kondisyon egzamen an : 600V, 25A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 350ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3P-3, SC-65-3
Pake Aparèy Founisè : TO-3P