Nimewo Pati :
PMZB670UPE,315
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET P-CH 20V 680MA DFN1006B-3
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
680mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
850 mOhm @ 400mA, 4.5V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
1.14nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
87pF @ 10V
Disipasyon Pouvwa (Max) :
360mW (Ta), 2.7W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1006B-3