Infineon Technologies - IPP100N08N3GHKSA1

KEY Part #: K6402313

[2747PC Stock]


    Nimewo Pati:
    IPP100N08N3GHKSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 80V 70A TO220-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPP100N08N3GHKSA1 electronic components. IPP100N08N3GHKSA1 can be shipped within 24 hours after order. If you have any demands for IPP100N08N3GHKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPP100N08N3GHKSA1 Atribi pwodwi yo

    Nimewo Pati : IPP100N08N3GHKSA1
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 80V 70A TO220-3
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 80V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 70A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
    RD sou (Max) @ Id, Vgs : 10 mOhm @ 46A, 10V
    Vgs (th) (Max) @ Id : 3.5V @ 46µA
    Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2410pF @ 40V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 100W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PG-TO220-3
    Pake / Ka : TO-220-3