Rohm Semiconductor - RRH090P03TB1

KEY Part #: K6420178

RRH090P03TB1 Pricing (USD) [167001PC Stock]

  • 1 pcs$0.24485
  • 2,500 pcs$0.24363

Nimewo Pati:
RRH090P03TB1
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET P-CH 30V 9A 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor RRH090P03TB1 electronic components. RRH090P03TB1 can be shipped within 24 hours after order. If you have any demands for RRH090P03TB1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RRH090P03TB1 Atribi pwodwi yo

Nimewo Pati : RRH090P03TB1
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET P-CH 30V 9A 8SOIC
Seri : -
Estati Pati : Not For New Designs
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 15.4 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 650mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOP
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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