STMicroelectronics - STGD5NB120SZ-1

KEY Part #: K6423406

STGD5NB120SZ-1 Pricing (USD) [54689PC Stock]

  • 1 pcs$0.67314
  • 10 pcs$0.60499
  • 100 pcs$0.48625
  • 500 pcs$0.39949
  • 1,000 pcs$0.31312

Nimewo Pati:
STGD5NB120SZ-1
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 1200V 10A 75W IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Zener - Single, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGD5NB120SZ-1 electronic components. STGD5NB120SZ-1 can be shipped within 24 hours after order. If you have any demands for STGD5NB120SZ-1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGD5NB120SZ-1 Atribi pwodwi yo

Nimewo Pati : STGD5NB120SZ-1
Manifakti : STMicroelectronics
Deskripsyon : IGBT 1200V 10A 75W IPAK
Seri : PowerMESH™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 10A
Kouran - Pèseptè batman (Icm) : 10A
Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 5A
Pouvwa - Max : 75W
Oblije chanje enèji : 2.59mJ (on), 9mJ (off)
Kalite Antre : Standard
Gate chaje : -
Td (on / off) @ 25 ° C : 690ns/12.1µs
Kondisyon egzamen an : 960V, 5A, 1 kOhm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA
Pake Aparèy Founisè : I-PAK