DMN30H4D0LFDE-7 Pricing (USD) [432148PC Stock]
- 1 pcs$0.08559
- 3,000 pcs$0.04774
- Nimewo Pati:
- DMN30H4D0LFDE-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 300V .55A 6UDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Transistors - IGBTs - Modil yo, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN30H4D0LFDE-7 electronic components. DMN30H4D0LFDE-7 can be shipped within 24 hours after order. If you have any demands for DMN30H4D0LFDE-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN30H4D0LFDE-7 Atribi pwodwi yo
Nimewo Pati :
DMN30H4D0LFDE-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 300V .55A 6UDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
550mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.7V, 10V
RD sou (Max) @ Id, Vgs :
4 Ohm @ 300mA, 10V
Vgs (th) (Max) @ Id :
2.8V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
187.3pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
630mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
U-DFN2020-6 (Type E)
Pake / Ka :
6-UDFN Exposed Pad
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