IXYS - IXFD80N20Q-8XQ

KEY Part #: K6401333

[3087PC Stock]


    Nimewo Pati:
    IXFD80N20Q-8XQ
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CHANNEL 200V DIE.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF and Modil pouvwa chofè ...
    Avantaj konpetitif:
    We specialize in IXYS IXFD80N20Q-8XQ electronic components. IXFD80N20Q-8XQ can be shipped within 24 hours after order. If you have any demands for IXFD80N20Q-8XQ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFD80N20Q-8XQ Atribi pwodwi yo

    Nimewo Pati : IXFD80N20Q-8XQ
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CHANNEL 200V DIE
    Seri : HiPerFET™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
    Drive Voltage (Max Rds Sou, Min RDS Sou) : -
    RD sou (Max) @ Id, Vgs : -
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : -
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : -
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : -
    Pake Aparèy Founisè : Die
    Pake / Ka : Die