[8362PC Stock]
- Nimewo Pati:
- IRFR9120TR
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 100V 5.6A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Tiristors - SCR, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFR9120TR electronic components. IRFR9120TR can be shipped within 24 hours after order. If you have any demands for IRFR9120TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR9120TR Atribi pwodwi yo
Nimewo Pati :
IRFR9120TR
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 100V 5.6A DPAK
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
600 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
390pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 42W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D-Pak
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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