MMIX1T132N50P3 Pricing (USD) [2472PC Stock]
- 1 pcs$19.27328
- 10 pcs$18.02098
- 100 pcs$15.62526
- Nimewo Pati:
- MMIX1T132N50P3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- SMPD HIPERFETS MOSFETS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - RF, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in IXYS MMIX1T132N50P3 electronic components. MMIX1T132N50P3 can be shipped within 24 hours after order. If you have any demands for MMIX1T132N50P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MMIX1T132N50P3 Atribi pwodwi yo
Nimewo Pati :
MMIX1T132N50P3
Manifakti :
IXYS
Deskripsyon :
SMPD HIPERFETS MOSFETS
Seri :
Polar™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
63A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
43 mOhm @ 66A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
267nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
18600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
520W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Polar3™
Pake / Ka :
24-PowerSMD, 22 Leads
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