[8869PC Stock]
- Nimewo Pati:
- PHT11N06LT,135
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 55V 4.9A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PHT11N06LT,135 electronic components. PHT11N06LT,135 can be shipped within 24 hours after order. If you have any demands for PHT11N06LT,135, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHT11N06LT,135 Atribi pwodwi yo
Nimewo Pati :
PHT11N06LT,135
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 55V 4.9A SOT223
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 5A, 5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 5V
Vgs (Max) :
±13V
Antre kapasite (Ciss) (Max) @ Vds :
1400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta), 8.3W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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