[8441PC Stock]
- Nimewo Pati:
- PMV90EN,215
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 1.9A SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMV90EN,215 electronic components. PMV90EN,215 can be shipped within 24 hours after order. If you have any demands for PMV90EN,215, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMV90EN,215 Atribi pwodwi yo
Nimewo Pati :
PMV90EN,215
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 30V 1.9A SOT-23
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
84 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
132pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
310mW (Ta), 2.09W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236AB (SOT23)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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