[4163PC Stock]
- Nimewo Pati:
- IRL6372PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 8.1A 8SO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - RF, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRL6372PBF electronic components. IRL6372PBF can be shipped within 24 hours after order. If you have any demands for IRL6372PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL6372PBF Atribi pwodwi yo
Nimewo Pati :
IRL6372PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 30V 8.1A 8SO
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.1A
RD sou (Max) @ Id, Vgs :
17.9 mOhm @ 8.1A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 10µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1020pF @ 25V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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