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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. IXFT6N100F

IXYS-RF - IXFT6N100F

KEY Part #: K6398166

IXFT6N100F Pricing (USD) [9323PC Stock]

  • 1 pcs$6.01115
  • 10 pcs$5.41003
  • 100 pcs$4.44825
  • 500 pcs$3.72691
Nimewo Pati:
IXFT6N100F
Manifakti:
IXYS-RF
Detaye deskripsyon:
MOSFET N-CH 1000V 6A TO268.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in IXYS-RF IXFT6N100F electronic components. IXFT6N100F can be shipped within 24 hours after order. If you have any demands for IXFT6N100F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFT6N100F Atribi pwodwi yo

Nimewo Pati : IXFT6N100F
Manifakti : IXYS-RF
Deskripsyon : MOSFET N-CH 1000V 6A TO268
Seri : HiPerRF™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1770pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 180W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268 (IXFT)
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Dènye nouvèl

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