CSD88539NDT Pricing (USD) [144509PC Stock]
- 1 pcs$0.26909
- 250 pcs$0.26775
- 1,250 pcs$0.16666
- Nimewo Pati:
- CSD88539NDT
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET 2N-CH 60V 15A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD88539NDT electronic components. CSD88539NDT can be shipped within 24 hours after order. If you have any demands for CSD88539NDT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD88539NDT Atribi pwodwi yo
Nimewo Pati :
CSD88539NDT
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET 2N-CH 60V 15A 8SOIC
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15A
RD sou (Max) @ Id, Vgs :
28 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
741pF @ 30V
Pouvwa - Max :
2.1W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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