IRFS3307ZPBF Pricing (USD) [8412PC Stock]
- 1 pcs$1.30447
- 10 pcs$1.17843
- 100 pcs$0.89841
- 500 pcs$0.69876
- 1,000 pcs$0.57898
- Nimewo Pati:
- IRFS3307ZPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 75V 120A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFS3307ZPBF electronic components. IRFS3307ZPBF can be shipped within 24 hours after order. If you have any demands for IRFS3307ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFS3307ZPBF Atribi pwodwi yo
Nimewo Pati :
IRFS3307ZPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 75V 120A D2PAK
Seri :
HEXFET®
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
5.8 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4750pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
230W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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