IXTP1R4N120P Pricing (USD) [30561PC Stock]
- 1 pcs$1.55858
- 50 pcs$1.55082
- Nimewo Pati:
- IXTP1R4N120P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1200V 1.4A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP1R4N120P electronic components. IXTP1R4N120P can be shipped within 24 hours after order. If you have any demands for IXTP1R4N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP1R4N120P Atribi pwodwi yo
Nimewo Pati :
IXTP1R4N120P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1200V 1.4A TO-220
Seri :
Polar™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
24.8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
666pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
86W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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