STP6N120K3 Pricing (USD) [12425PC Stock]
- 1 pcs$2.83811
- 10 pcs$2.53314
- 100 pcs$2.07702
- 500 pcs$1.68186
- 1,000 pcs$1.41844
- Nimewo Pati:
- STP6N120K3
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 1200V 6A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STP6N120K3 electronic components. STP6N120K3 can be shipped within 24 hours after order. If you have any demands for STP6N120K3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP6N120K3 Atribi pwodwi yo
Nimewo Pati :
STP6N120K3
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 1200V 6A TO-220
Seri :
SuperMESH3™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.4 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1050pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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