Nimewo Pati :
SCT3105KLGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
SCT3105KL IS AN SIC SILICON CAR
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
137 mOhm @ 7.6A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 3.81mA
Chaje Gate (Qg) (Max) @ Vgs :
51nC @ 18V
Antre kapasite (Ciss) (Max) @ Vds :
574pF @ 800V
Disipasyon Pouvwa (Max) :
134W
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N