Microsemi Corporation - APTMC120AM25CT3AG

KEY Part #: K6522041

APTMC120AM25CT3AG Pricing (USD) [211PC Stock]

  • 1 pcs$194.21626
  • 10 pcs$184.83957

Nimewo Pati:
APTMC120AM25CT3AG
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET 2N-CH 1200V 105A SP3F.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur and Transistors - JFETs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTMC120AM25CT3AG Atribi pwodwi yo

Nimewo Pati : APTMC120AM25CT3AG
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET 2N-CH 1200V 105A SP3F
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 113A (Tc)
RD sou (Max) @ Id, Vgs : 25 mOhm @ 80A, 20V
Vgs (th) (Max) @ Id : 2.2V @ 4mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs : 197nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds : 3800pF @ 1000V
Pouvwa - Max : 500W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP3
Pake Aparèy Founisè : SP3