APTMC120AM25CT3AG Pricing (USD) [211PC Stock]
- 1 pcs$194.21626
- 10 pcs$184.83957
- Nimewo Pati:
- APTMC120AM25CT3AG
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET 2N-CH 1200V 105A SP3F.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTMC120AM25CT3AG electronic components. APTMC120AM25CT3AG can be shipped within 24 hours after order. If you have any demands for APTMC120AM25CT3AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTMC120AM25CT3AG Atribi pwodwi yo
Nimewo Pati :
APTMC120AM25CT3AG
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1200V 105A SP3F
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) :
1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
113A (Tc)
RD sou (Max) @ Id, Vgs :
25 mOhm @ 80A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 4mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
197nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds :
3800pF @ 1000V
Pouvwa - Max :
500W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
SP3
Pake Aparèy Founisè :
SP3
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